1EDI3033ASXUMA1

Infineon Technologies
726-1EDI3033ASXUMA1
1EDI3033ASXUMA1

Ürt.:

Açıklama:
Kapı Sürücüleri HVGD_TRACT

ECAD Modeli:
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Stokta Var: 2.038

Stok:
2.038
Hemen Gönderilebilir
Siparişte:
1.000
Fabrika Teslim Süresi:
20
Hafta Gösterilenden daha büyük miktarlar için fabrikada tahmini üretim süresi.
Bu ürün için uzun teslimat süresi bildirilmiştir.
Minimum: 1   Çoklu: 1
Birim Fiyat:
-,-- €
Toplam Fiyat:
-,-- €
Tahmini Gümrük Vergisi:
Paketleme:
Tam Makara (1000'in katları olarak sipariş verin)

Fiyatlandırma (EUR)

Miktar Birim Fiyat
Toplam Fiyat
Hazır Kesim Bant / MouseReel™
3,87 € 3,87 €
2,93 € 29,30 €
2,71 € 67,75 €
2,45 € 245,00 €
2,32 € 580,00 €
2,25 € 1.125,00 €
Tam Makara (1000'in katları olarak sipariş verin)
2,18 € 2.180,00 €
2,14 € 4.280,00 €
2,13 € 10.650,00 €
† 5,00 € MouseReel™ ücreti alışveriş sepetinize eklenecek ve hesaplanacaktır. MouseReel™ siparişleri iptal veya iade edilemez.

Ürün Niteliği Öznitelik Değeri Özellik Seçin
Infineon
Ürün Kategorisi: Kapı Sürücüleri
RoHS:  
Isolated Gate Drivers
High-Side
SMD/SMT
DSO-20
1 Driver
1 Output
20 A
3 V
5.5 V
Inverting, Non-Inverting
55 ns
45 ns
- 40 C
+ 150 C
AEC-Q100
Reel
Cut Tape
MouseReel
Marka: Infineon Technologies
Montaj Ülkesi: Not Available
Dağıtım Ülkesi: Not Available
Menşe Ülke: DE
Mantık Türü: CMOS
Maksimum Kapatma Gecikme Süresi: 120 ns
Maksimum Açılma Gecikme Süresi: 120 ns
Neme Duyarlı: Yes
İşletim Besleme Akımı: 10 mA
Pd - Güç Dağılımı: 300 mW
Ürün Tipi: Gate Drivers
Yayılma Gecikmesi - Maks: 120 ns
Rds Açık - Tahliye-Kaynağı Direnci: 1 Ohms
Fabrika Paket Miktarı: 1000
Alt kategori:: PMIC - Power Management ICs
Teknoloji: SiC
Ticari Unvan: EiceDriver
Parça No Takma Adları: 1EDI3033AS SP005423624
Bulunan ürünler:
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Seçilen özellikler: 0

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CNHTS:
8542399000
USHTS:
8542310075
ECCN:
EAR99

Automotive Solutions

Infineon Automotive Solutions are a comprehensive and reliable portfolio of products for automotive and other applications. Infineon has 40 years of experience developing and producing products to meet automotive market demands. These technologies are used to design and produce a large number of power products to meet all automotive, transportation, lighting and motor-drive industry requirements. These products are automotive qualified (AEC-Q100 or AEC-Q101) and available for current and future electronic system designs.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

EiceDRIVER™ Isolated & Non-Isolated Gate Drivers

Infineon EiceDRIVER™ Isolated and Non-Isolated Gate Drivers provide optimized low- and high-voltage gate driver solutions for MOSFETs, IGBTs, and IGBT modules. These isolated and non-isolated gate driver ICs are designed to build reliable and efficient applications. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Infineon gate drivers provide a wide range of typical output current options, from 0.1A up to 10A, suitable for any power device size.

EiceDRIVER™ High-Voltage Gate Driver ICs

Infineon Technologies EiceDRIVER™ High-Voltage Gate Driver ICs for Electric Vehicle (EV) applications include automotive-qualified IGBT driver ICs and SiC MOSFET driver ICs. The Infineon Technologies EiceDRIVER™ High-Voltage Gate Driver ICs provide galvanic isolation and bidirectional signal transmission with high ambient temperature capability. The ICs enable extremely short propagation delays and support IGBT and SiC technologies up to 1200V. The devices incorporate key features/parameters to drive SiC MOSFETs such as an enhanced switching behavior (extended CMTI capability, fast propagation delay, switching frequency), wide output-side supply range, short internal dead time, and DESAT/OCP threshold level adaptation. Advanced monitoring and protection features facilitate the implementation of ISO 26262 functional safety requirements and provide stable operation in harsh EMC environments.