IDM02G120C5XTMA1

Infineon Technologies
726-IDM02G120C5XTMA1
IDM02G120C5XTMA1

Ürt.:

Açıklama:
SiC Schottky Diodes SIC CHIP/DISCRETE

Veri Sayfası:
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Stokta Var: 95

Stok:
95 Hemen Gönderilebilir
Fabrika Teslim Süresi:
30 Hafta Gösterilenden daha büyük miktarlar için fabrikada tahmini üretim süresi.
Bu ürün için uzun teslimat süresi bildirilmiştir.
Minimum: 1   Çoklu: 1
Birim Fiyat:
-,-- €
Toplam Fiyat:
-,-- €
Tahmini Gümrük Vergisi:
Paketleme:
Tam Makara (2500'in katları olarak sipariş verin)

Fiyatlandırma (EUR)

Miktar Birim Fiyat
Toplam Fiyat
Hazır Kesim Bant / MouseReel™ †
2,04 € 2,04 €
1,31 € 13,10 €
0,894 € 89,40 €
0,74 € 370,00 €
0,681 € 681,00 €
Tam Makara (2500'in katları olarak sipariş verin)
0,622 € 1.555,00 €
† 5,00 € MouseReel™ ücreti alışveriş sepetinize eklenecek ve hesaplanacaktır. MouseReel™ siparişleri iptal veya iade edilemez. ↩

Ürün Niteliği Öznitelik Değeri Özellik Seçin
Infineon
Ürün Kategorisi: SiC Schottky Diodes
RoHS:  
SMD/SMT
DPAK-2 (TO-252-2)
Single
2 A
1.2 kV
1.4 V
37 A
1.2 uA
- 55 C
+ 175 C
IDM02G120C5
Reel
Cut Tape
MouseReel
Marka: Infineon Technologies
Montaj Ülkesi: Not Available
Dağıtım Ülkesi: Not Available
Menşe Ülke: AT
Pd - Güç Dağılımı: 98 W
Ürün Tipi: SiC Schottky Diodes
Fabrika Paket Miktarı: 2500
Alt kategori:: Diodes & Rectifiers
Ticari Unvan: CoolSiC
Vr - Ters Voltaj: 1.2 kV
Parça No Takma Adları: IDM02G120C5 SP001127112
Birim Ağırlık: 454 mg
Bulunan ürünler:
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Seçilen özellikler: 0

Veri Sayfası

Product Catalogs

SPICE Models

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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Gen 5 1200V CoolSiC™ Schottky Diodes

Infineon Technologies Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220, and 20A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.

Fast DC EV Charging Solutions

Infineon Technologies Fast DC Electric Vehicle (EV) Charging Solutions address the needs for e-mobility. With the ever-growing number of electric vehicles on the market and pressure from governments to reduce vehicle emissions to zero by 2050, there is a great need for more efficient charging solutions. As various consumer studies show, the acceptance of electromobility depends largely on the availability and duration of the charging process. High-power DC charging stations are the answer to these market requirements. Today, a typical electric vehicle can charge about 80% of its battery capacity in less than 10 minutes. This is comparable to refueling a conventional car with an internal combustion engine. Infineon helps bring energy-efficient DC fast-charging designs to life. Benefit from a comprehensive, ready-to-implement one-stop product and design portfolio that covers the entire product range from power conversion, microcontrollers, security, auxiliary power supply, and communication.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

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