IDH04G65C5XKSA2

Infineon Technologies
726-IDH04G65C5XKSA2
IDH04G65C5XKSA2

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Açıklama:
SiC Schottky Diodes SIC DIODES

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Stokta Var: 2.678

Stok:
2.678
Hemen Gönderilebilir
Siparişte:
900
Fabrika Teslim Süresi:
52
Hafta Gösterilenden daha büyük miktarlar için fabrikada tahmini üretim süresi.
Minimum: 1   Çoklu: 1
Birim Fiyat:
-,-- €
Toplam Fiyat:
-,-- €
Tahmini Gümrük Vergisi:

Fiyatlandırma (EUR)

Miktar Birim Fiyat
Toplam Fiyat
1,94 € 1,94 €
0,83 € 8,30 €
0,759 € 75,90 €
0,625 € 312,50 €

Ürün Niteliği Öznitelik Değeri Özellik Seçin
Infineon
Ürün Kategorisi: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220-2
Single
4 A
650 V
1.5 V
38 A
200 nA
- 55 C
+ 175 C
XDH04G65
Tube
Marka: Infineon Technologies
Montaj Ülkesi: Not Available
Dağıtım Ülkesi: Not Available
Menşe Ülke: AT
Pd - Güç Dağılımı: 48 W
Ürün Tipi: SiC Schottky Diodes
Fabrika Paket Miktarı: 500
Alt kategori:: Diodes & Rectifiers
Ticari Unvan: CoolSiC
Vr - Ters Voltaj: 650 V
Parça No Takma Adları: IDH04G65C5 SP001632402
Birim Ağırlık: 2 g
Bulunan ürünler:
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Seçilen özellikler: 0

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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

CoolSiC™ Schottky Diodes

Infineon CoolSiC™ Schottky Diodes provide a relatively high on-state resistance and leakage current. In SiC material, Schottky diodes can reach a much higher breakdown voltage. The Infineon portfolio of SiC Schottky products covers 600V and 650V to 1200V Schottky diodes. Combining a fast silicon-based switch with a CoolSiC™ Schottky diode is often termed a “hybrid” solution. In recent years, Infineon has manufactured several millions of hybrid modules and has seen them installed in various customer products in applications like solar and uninterruptible power supplies (UPS).

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

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