Vishay En Yeni Transistörler
Uygulanan Filtreler:
Vishay SiJK5100E N-Channel MOSFET
11.11.2024
11.11.2024
TrenchFET® Gen V power MOSFET with 100V drain-source voltage and 536W maximum power dissipation.
Vishay SiEH4800EW 80V TrenchFET® Gen IV N-Channel MOSFET
10.25.2024
10.25.2024
Comes in a PowerPAK® 8mm x 8mm BWL package with an on-resistance of 0.00115Ω.
Vishay MXP120A MaxSiC™ 1200V N-Channel MOSFETs
08.26.2024
08.26.2024
Feature fast switching speed, 3μs short circuit withstand time, and 139W maximum power dissipation.
Vishay SiJK140E N-Kanal 40 V (D-S) MOSFET
07.01.2024
07.01.2024
Features TrenchFET® Gen V power technology ideal for synchronous rectification and automation.
Vishay Superjunction MOSFETs in PowerPAK® 10 x 12
05.17.2024
05.17.2024
Features power technology, optimizes efficiency, and minimizes power loss during conduction.
Vishay SiRS5700DP N-Channel 150V (D-S) MOSFET
01.29.2024
01.29.2024
TrenchFET® Gen V power MOSFET with a very low RDS x Qg figure-of-merit (FOM).
Vishay POWERPAK® 1212 MOSFETs
01.09.2024
01.09.2024
Ideal for switching applications and boasts a die-on resistance of approximately 1mΩ.
Vishay SIH Series MOSFETs
07.31.2023
07.31.2023
Offers 4th generation E series technology in a standard TO package.
Vishay SiSD5300DN 30V N-Channel MOSFET
07.27.2023
07.27.2023
TrenchFET® Gen V power MOSFET utilizing source flip technology that enhances thermal performance.
Vishay SiHR080N60E N-Kanal Güç MOSFET
07.27.2023
07.27.2023
Bir PowerPAK® 8 x 8LR paketinde dördüncü nesil 600 V E serisi güç MOSFET'i.
Vishay Half Bridge IGBTs
07.10.2023
07.10.2023
Features Trench IGBT technology and current ratings of 100A, 150A, and 200A.
Vishay SIP32433 Single-Channel eFuses
11.30.2022
11.30.2022
Integrate multiple control and protection features.
Vishay EMIPAK PressFit Power Modules
09.26.2022
09.26.2022
Designed to facilitate a reliable performance in rugged 15A to 150A applications.
Görüntülenen: 1 - 13 / 13
Nexperia BUK9Q N-Channel Trench MOSFET
09.09.2025
09.09.2025
Logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C.
Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs
07.03.2025
07.03.2025
40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs
07.03.2025
07.03.2025
Normally off e-mode devices that deliver superior performance and very low on-state resistance.
Renesas Electronics TP65H030G4Px 650V 30mΩ GaN FETs
07.01.2025
07.01.2025
These FETs come in TOLT, TO247, and TOLL packages and use the Gen IV Plus SuperGaN® platform.
ROHM Semiconductor Small Signal Dual Channel MOSFETs
06.30.2025
06.30.2025
Feature low on-resistance and fast switching, and are ideal for motor drives.
onsemi NVMFS4C03NWFET1G Single N-Channel Power MOSFET
06.23.2025
06.23.2025
Delivers excellent thermal performance and low RDS(on) in a compact 5mm x 6mm PowerFLAT package.
Littelfuse IXSJxN120R1 1.200 V SiC Güç MOSFET'leri
06.23.2025
06.23.2025
High-performance devices designed for demanding power conversion applications.
ROHM Semiconductor Automotive 40A & 80A Power MOSFETs
06.16.2025
06.16.2025
Feature low on-resistance and are ideal for ADAS, automotive, and lighting applications.
onsemi NVMFDx 100V Dual N-Channel Power MOSFETs
06.09.2025
06.09.2025
Features low RDS(on) values and fast switching characteristics in a space-saving DFN-8 package.
PANJIT 50V Enhancement Mode MOSFETs
06.09.2025
06.09.2025
These MOSFETs have advanced Trench process technology and offer a low RDS(ON).
ROHM Semiconductor RV7E035AT P-Channel Small Signal MOSFET
06.04.2025
06.04.2025
Compact, high-performance MOSFET designed for low-voltage switching applications.
Torex Semiconductor XPJ101N04N8R & XPJ102N09N8R N-Channel MOSFETs
06.03.2025
06.03.2025
Features low on-resistance, reducing energy losses and improving overall system efficiency.
Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs
06.03.2025
06.03.2025
Automotive and industrial qualified MOSFETs with an up to 78mΩ maximum drain-source on-resistance.
Infineon Technologies CoolMOS™ CM8 650V Power MOSFETs
06.03.2025
06.03.2025
Designed according to the Superjunction (SJ) principle to offer low switching and conduction losses.
onsemi NXH015F120M3F1PTG Silicon Carbide (SiC) Module
05.23.2025
05.23.2025
Features 15mΩ/1200V M3S SiC MOSFET full-bridge and a thermistor with Al2O3 DBC in an F1 package.
STMicroelectronics STGWA30IH160DF2 1600V IH2 Series IGBT
05.22.2025
05.22.2025
Created by implementing an advanced proprietary trench gate field-stop structure.
onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFET
05.22.2025
05.22.2025
Features a maximum 76mΩ @ 20V maximum RDS(ON), and 1700V drain-to-source voltage.
Ampleon BLF981/BLF981S LDMOS Power Transistors
05.15.2025
05.15.2025
Designed for high-efficiency broadband applications across a frequency range from HF to 1400MHz.
Ampleon BLP981 LDMOS Power Transistor
05.15.2025
05.15.2025
170W power transistor engineered for broadband applications spanning from HF up to 1400MHz.
Wolfspeed YM Six-Pack Silicon Carbide Power Modules
05.14.2025
05.14.2025
Automotive-qualified modules that are designed for seamless design integration and durability.
onsemi NTTFSSCH1D3N04XL T10 PowerTrench® MOSFET
05.13.2025
05.13.2025
Engineered to handle high currents, which is crucial for DC-DC power conversion stages.
APC-E Silicon Carbide (SiC) MOSFETs
05.06.2025
05.06.2025
Delivers high power, high frequency, and unmatched performance for demanding applications.
Infineon Technologies 700V CoolGaN™ G5 Power Transistors
05.02.2025
05.02.2025
Designed to operate at high frequencies with superior efficiency, enabling ultra-fast switching.
Infineon Technologies OptiMOS™ 6 200V Power MOSFETs
04.30.2025
04.30.2025
Offer excellent gate charge x RDS(on) product (FOM) and low on‑resistance RDS(on).
onsemi NVTFWS003N04XM MOSFETs
04.28.2025
04.28.2025
A low RDS(on) & capacitance in an AEC-Q101-qualified, µ8FL 3.3mm x 3.3mm small footprint package.
Görüntülenen: 1 - 25 / 500